Towards optimal design and FPGA implementation of spiking neural networks

W. Guo, H. Yantir, M. Fouda, A. Eltawil, and K. Salama, IEEE Trans. Neural Netw. Learn. Syst, under review, 2020.
Keyword: Spiking neural networks, genetic algorithm, numerical solver, FPGA

Towards efficient neuromorphic hardware: unsupervised adaptive neuron pruning

W. Guo, H. Yantir, M. Fouda, A. Eltawil, and K. Salama, Electronics 9(7), 2020.
Keyword: Spiking neural networks, neuron pruning, FPGA

An Ultra-Area-Efficient 1024-Point In-Memory FFT Processor

H. Yantir, W. Guo, A. Eltawil, F. Kurdanhi, and K. Salama, Micromachine 10(8), 2019.
Keyword: In memory computing, FFT, associate processor

Polarization properties of wurtzite III nitride indicate the principle of polarization engineering

K. Liu, F. AlQatari, H. Sun, J. Li, W. Guo, and X. Li arXiv:1808.07211, 2018.
Keyword: III-nitride material, DFT, polarization

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

K. Li, H. Alotaibi, H. Sun, R. Lin, W. Guo, C. Castanedo, K. Liu, S. Galán, X. Li J. Crystal. Growth 468, 2018.
Keyword: III-nitride material, MOCVD, material growth

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

K. Liu, H. Sun, F. AlQatari, W. Guo, X. Liu, J. Li, C. Castanedo, and X. Li, Appl. Phys. Lett. 111(22), 2017.
Keyword: III-nitride material, DFT, polarization

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

H. Sun, F. Wu, Y. Park, C. Liao, W. Guo, N. Alfaraj, K. Li, D. Anjum, T. Detchprohm, R. Dupuis, and X. Li, Appl. Phys. Expr. 11(1), 2017.
Keyword: III-nitride material, heterostructures

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

H. Sun, C. Castanedo, K. Liu, K. Li, W. Guo, R. Lin, X. Liu, J. Li, and X. Li, Appl. Phys. Lett. 111(16), 2017.
Keyword: III-nitride material, Gallium oxide, power device